https://met.misis.ru/jour/article/view/513/394; Merolla P.A., Arthur J.V., Alvarez-Icaza R., Cassidy A.S., Sawada J., Akopyan F., Jackson B.L., Imam N., Guo Ch., Nakamura Y., Brezzo B., Vo I., Esser S.K., Appuswamy R., Taba B., Amir A., Flickner M.D., Risk W.P., Manohar R., Modha Dh.S. Artificial brains. A million spiking-neuron integrated circuit with a scalable communication network and interface. Science. 2014; 345(6197): 668—673.
https://doi.org/10.1126/science.1254642; Wong H.-S.P., Lee H.-Y., Yu Sh., Chen Y.-Sh., Wu Y., Chen P.-Sh., Lee B., Chen F.T., Tsai M.-J. Metal-oxide RRAM. Proceedings of the IEEE. 2012; 100(6): 1951—1970.
https://doi.org/10.1109/JPROC.2012.2190369; Yang J.J., Strukov D.B., Stewart D.R. Memristive devices for computing. Nature Nanotechnology. 2013; 8(1): 13—24.
https://doi.org/10.1038/nnano.2012.240; Li C., Hu M., Li Y., Ge N., Montgomery E., Zhang J., Song W., Dávila N., Graves C.E., Li Zh., Strachan J.P., Lin P., Wang Zh., Barnell M., Wu Q., Williams R.S., Yang J.J., Xia Q. Analogue signal and image processing with large memristor crossbars. Nature Electronics. 2018; 1: 52—59.
https://doi.org/10.1038/s41928-017-0002-z; Morozov A.Yu., Abgaryan K.K., Reviznikov D.L. Mathematical model of a neuromorphic network based on memristive elements. Chaos, Solitons & Fractals. 2021; 143: 110548.
https://doi.org/10.1016/j.chaos.2020.110548; Морозов А.Ю., Абгарян К.К., Ревизников Д.Л. Математическое моделирование самообучающейся нейроморфной сети, основанной на наноразмерных мемристивных элементах с 1T1R-кроссбар-архитектурой. Известия высших учебных заведений. Материалы электронной техники. 2020; 23(3): 186—195.
https://doi.org/10.17073/1609-3577-2020-3-186-195; Diehl P., Cook M. Unsupervised learning of digit recognition using spike-timing-dependent plasticity. Frontiers in Computational Neuroscience. 2015; 9: 99.
https://doi.org/10.3389/fncom.2015.00099; Ambrogio S., Balatti S., Milo V., Carboni R., Wang Zh., Calderoni A., Ramaswamy N., Ielmini D. Neuromorphic learning and recognition with one-transistor-one-resistor synapses and bistable metal oxide RRAM. IEEE Transactions on Electron Devices. 2016; 63(4): 1508—1515.
https://doi.org/10.1109/TED.2016.2526647; Guo Y., Wu H., Gao B., Qian H. Unsupervised learning on resistive memory array based spiking neural networks. Frontiers in Neuroscience. 2019; 13: 812.
https://doi.org/10.3389/fnins.2019.00812; OpenMP. URL:
https://www.openmp.org/ (дата обращения: 02.04.2021).; PVS-Studio is a static analyzer on guard of code quality, security (SAST), and code safety. URL:
https://pvs-studio.com/ru/a/0057/ (дата обращения 02.04.2021).; Rodriguez-Fernandez A., Cagli C., Perniola L., Miranda E., Suñé J. Characterization of HfO2-based devices with indication of second order memristor effects. Microelectronic Engineering. 2018; 195: 101—106.
https://doi.org/10.1016/j.mee.2018.04.006; Теплов Г.С., Горнев Е.С. Модель на языке Verilog-A многоуровневого биполярного мемристора с учетом девиаций параметров переключения. Микроэлектроника. 2019; 48(3): 163—175.
https://doi.org/10.1134/S0544126919030104; Васильев А., Чернов П.С. Математическое моделирование мемристора в присутствии шума. Математическое моделирование. 2014; 26(1): 122—132.; Morozov A.Yu., Abgaryan K.K., Reviznikov D.L. Simulation of the neuromorphic network operation taking into account stochastic effects. In: Short paper proceed. of the VI Inter. conf. on information technologies and high-performance computing (ITHPC 2021). Khabarovsk, 14–16 September 2021. CEUR Workshop Proceedings; 2021. P. 84—91.; Морозов А.Ю., Абгарян К.К., Ревизников Д.Л. Математическое моделирование аналоговой самообучающейся нейронной сети на основе мемристивных элементов с учетом стохастической динамики переключения. Российские нанотехнологии. 2021; 16(6): 76—86.
https://doi.org/10.1134/S1992722321060157; Morozov A.Yu., Abgaryan K.K., Reviznikov D.L. Interval model of a memristor crossbar network. Physica Status Solidi (B). 2022; 259(11): 2200150.
https://doi.org/10.1002/pssb.202200150; Морозов А.Ю., Ревизников Д.Л. Интервальный подход к решению задач параметрической идентификации динамических систем. Дифференциальные уравнения. 2022; 58(7): 962—976.
https://doi.org/10.31857/S0374064122070081; Mladenov V. Analysis of memory matrices with HfO2 memristors in a PSpice environment. Electronics. 2019; 8(4): 383.
https://doi.org/10.3390/electronics8040383; Zheng G., Mohanty S.P., Kougianos E., Okobiah O. Polynomial metamodel integrated Verilog-AMS for memristor-based mixed-signal system design. Proceed. IEEE 56th Inter. midwest symposium on circuits and systems (MWSCAS). Columbus, OH, 04 August 2013. Demand Purchase at Partner; 2013. P. 916—919.
https://doi.org/10.1109/MWSCAS.2013.6674799; Martyshov M.N., Emelyanov A.V., Demin V.A., Nikiruy K.E., Minnekhanov A.A., Nikolaev S.N., Taldenkov A.N., Ovcharov A.V., Presnyakov M.Yu., Sitnikov A.V., Vasiliev A.L., Forsh P.A., Granovsky A.B., Kashkarov P.K., Kovalchuk M.V., Rylkov V.V. Multifilamentary character of anticorrelated capacitive and resistive switching in memristive structures based on (Co-Fe-B)x(LiNbO3)100-x nanocomposite. Physical Review Applied. 2020; 14(3): 034016.
https://doi.org/10.1103/PhysRevApplied.14.034016; Rylkov V., Nikolaev S., Demin V., Emelyanov A.V., Nikiruy K.E., Levanov V.A., Presnyakov M.Y., Taldenkov A.N., Vasiliev A.L., Chernoglazov K.Y., Tugushev V.V., Sitnikov A.V., Kalinin Y.E., Bugaev A.S., Granovsky A.B., Vedeneev A.S. Transport, magnetic, and memristive properties of a nanogranular (CoFeB)x(LiNbOy)100-x composite material. Journal of Experimental and Theoretical Physics. 2018; 126(3): 353—367.
https://doi.org/10.1134/S1063776118020152; Фотохостинг Pinterest. URL:
https://ru.pinterest.com/pin/351912463120005/ (дата обращения: 02.09.2022).;
https://met.misis.ru/jour/article/view/513