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Review on Performance Perspectives of Dielectric Materials Used in Advanced Semiconductor Devices for Various Applications
Firas Natheer Agha ; Faris Hassan Taha ; Billel Smaani ; et al.
Mağallaẗ Al-kūfaẗ Al-handasiyyaẗ, Vol 17, Iss 1, Pp 439-455 (2026)

dielectric materials hk dielectric sio₂ hfo₂ permittivity Engineering (General). C... …

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Optical Switching of Robust Ferroelectric Polarization on Epitaxial Hf0.5Zr0.5O2 Integrated with BaTiO3
Wenjing Dong ; Huan Tan ; Jingye Zou ; et al.
Nano-Micro Letters, Vol 18, Iss 1, Pp 1-15 (2026)

HfO2 Hafnium oxide Multilayers Hf0.5Zr0.5O2 Ferroelectric Optoelectric …

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Fast Switching and High Polarization in Ferroelectric Hf0.5Zr0.5O2 Films
Faizan Ali ; Tingfeng Song ; Florencio Sánchez ; et al.
Small Science, Vol 6, Iss 2, Pp n/a-n/a (2026)

defect dipoles domain dynamics domain wall ferroelectric HfO2 polarization switching k... Materials of engineering... …

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Dielectric tunability of HfAlOx thin films for reconfigurable filter applications
Ziyu Wang ; Zhihua Zhao ; Fei Yan ; et al.
Journal of Advanced Dielectrics, Vol 16, Iss 01 (2026)

Ferroelectric thin films dielectric tunability HfO2 reconfigurable filter Electricity QC501-721

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Enhanced Linear Conductance Modulation by La‐Doping in HfO2‐Based Memristors for Neuromorphic Applications
Taewook Kim ; Márton Major ; Enrique Miranda ; et al.
Advanced Electronic Materials, Vol 12, Iss 1, Pp n/a-n/a (2026)

analog memory HfO2 memristor neuromorphic computing RRAM Electric apparatus and m... …

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N‐Type Behavior from a P‐Type Dopant: Charge Compensation Mechanisms in Trivalent Y‐Doped HfO2
Oliver Rehm ; Lutz Baumgarten ; Florian Wunderwald ; et al.
Advanced Physics Research, Vol 5, Iss 1, Pp n/a-n/a (2026)

HAXPES HfO2 oxygen vacancies (OVs) p‐doping limit Physics QC1-999

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Synthesis of high-density Hf1-x Lax O2 (HLO) ceramic targets with suppressed secondary phase and growth of thin films by rf magnetron sputtering
Park, Jae Ho ; He, Rui ; Hong, In Pyo ; et al.
In Journal of Alloys and Compounds 15 March 2026 1058

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Machine learning-guided phase-structure design for optimizing the ferroelectric properties of doped HfO2
Zhang, Yan ; Lu, Zihao ; Yang, Yuan ; et al.
In Materials Science in Semiconductor Processing 15 March 2026 204

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Linear-response TDDFT and supercell core-hole calculations of electron energy-loss spectra in polymorphic HfO2
Fan, Jiachen ; Gao, Shang-Peng
In Computational Materials Science 10 March 2026 267

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Design, structural evolution, and radiation attenuation behavior of HfO2-Modified ceramics
Oto, Berna ; Kavaz, Esra ; Çakar, Nurtaç ; et al.
In Applied Radiation and Isotopes March 2026 229

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Ferroelectric HZO/Al2O3 stacked films with enhanced fatigue resistance for FeFET memory devices
Zhang, Yan ; Wang, Xinyuan ; Wang, Dao ; et al.
In Materials Science & Engineering B March 2026 325

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A systematic DFT study on the effects of oxygen vacancy concentration and site-dependence on polarization switching in HfO2
Shang, Jiaying ; Kong, Minghui ; Zhang, Qiankun
In Computational and Theoretical Chemistry February 2026 1256

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Normally-off Al/HfO2/Al-gated diamond field effect transistor on a heteroepitaxial diamond substrate
Nam, Yoonseok ; Kwak, Taemyung ; Ma, Hyunsu ; et al.
In Diamond & Related Materials February 2026 162

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Photoluminescence properties of HfO2:RE3+ (RE = Eu, Sm, Tb, Dy) coatings formed by plasma electrolytic oxidation of hafnium in an electrolyte containing RE oxide particles
Stojadinović, Stevan ; Ćirić, Aleksandar
In Journal of Alloys and Compounds 31 January 2026 1052

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Interfacial electronic structure in hybrid HfO2-Graphene nanostructures
Akhtar, Arsalan ; Rauwel, Protima ; Rauwel, Erwan ; et al.
In Computational Materials Science 30 January 2026 262

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First-principles mechanism of TDMAH adsorption on pristine and laser-functionalized graphene toward area-selective atomic layer deposition of HfO2
Khosravi, Atiye ; Luo, Xichun ; Xie, Wenkun ; et al.
In Applied Surface Science March 2026

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Investigation of gamma radiation shielding properties of hafnium dioxide thin films prepared at different molarities with using 14.9, 22.1, 32.1, 41.5 and 59.5 keV energies
Kanmaz, I. ; Köksal, O.K. ; Apaydin, G. ; et al.
In Applied Radiation and Isotopes January 2026 227

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Electronic band structure engineering in ALD HfO2: Linking impurity chemistry to electronic performance and charge transport
Xia, Bingbing ; Lin, Guocong ; Ganem, Jean-Jacques ; et al.
In Acta Materialia 1 January 2026 304

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HfO₂ barrier layers: Thickness-dependent corrosion protection of copper thin films for potential microelectronic applications with sweat contact
KAHVECİ, Osman ; RUSDI, Muh ; AKKAYA, Abdullah ; et al.
In Microelectronics Reliability January 2026 176

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